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Creators/Authors contains: "Sampson, John"

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  1. ; ; ; (, 21st USENIX Conference on File and Storage Technologies (FAST))
    Accepted Manuscript Full Text Available
  2. ; ; ; (, GLSVLSI '22: Proceedings of the Great Lakes Symposium on VLSI 2022)
    Full Text Available 
  3. ; ; ; (, IEEE Transactions on Very Large Scale Integration (VLSI) Systems)
    Full Text Available 
  4. ; ; ; ; (, 2021 IEEE International Conference on Networking, Architecture and Storage (NAS))
    Full Text Available 
  5. ; ; ; ; ; ; (, 2020 21st International Symposium on Quality Electronic Design (ISQED))
    This work proposes a new Ferroelectric FET (FeFET) based Ternary Content Addressable Memory (TCAM) with features of integrated search and read operations (along with write), which we refer to as TCAM-RAM. The proposed memory exploits the unique features of the emerging FeFET technology, such as 3-terminal device design, storage in the gate stack, etc., to achieve the proposed functionality. We also introduce Approximate CAM-RAM, which can quantize the bit vector similarity. All the proposed designs operate without negative voltages. We describe both NAND and NOR variants of CAM design. Our CAM design provides 31% area improvement over the previous FeFET 6T CAM design. 
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